Temperature Dependence of Raman-Active In-Plane E<sub>2g</sub> Phonons in Layered Graphene and h-BN Flakes.
Author | |
---|---|
Abstract |
:
Thermal properties of sp2 systems such as graphene and hexagonal boron nitride (h-BN) have attracted significant attention because of both systems being excellent thermal conductors. This research reports micro-Raman measurements on the in-plane E2g optical phonon peaks (~ 1580 cm-1 in graphene layers and ~ 1362 cm-1 in h-BN layers) as a function of temperature from - 194 to 200 °C. The h-BN flakes show higher sensitivity to temperature-dependent frequency shifts and broadenings than graphene flakes. Moreover, the thermal effect in the c direction on phonon frequency in h-BN layers is more sensitive than that in graphene layers but on phonon broadening in h-BN layers is similar as that in graphene layers. These results are very useful to understand the thermal properties and related physical mechanisms in h-BN and graphene flakes for applications of thermal devices. |
Year of Publication |
:
2018
|
Journal |
:
Nanoscale research letters
|
Volume |
:
13
|
Issue |
:
1
|
Number of Pages |
:
25
|
Date Published |
:
2018
|
ISSN Number |
:
1931-7573
|
URL |
:
https://dx.doi.org/10.1186/s11671-018-2444-2
|
DOI |
:
10.1186/s11671-018-2444-2
|
Short Title |
:
Nanoscale Res Lett
|
Download citation |